Porous and Water Stable 2D Hybrid Metal Halide with Broad Light Emission and Selective H2O Vapor Sorption

In this work we report a strategy for generating porosity in hybrid metal halide materials using molecular cages that serve as both structure-directing agents and counter-cations. Reaction of the [2.2.2] cryptand (DHS) linker with Pb^II in acidic media gave rise to the first porous and water-stable 2D metal halide semiconductor (DHS)₂Pb₅Br₁₄. The corresponding material is stable in water for a year, while gas and vapor-sorption studies revealed that it can selectively and reversibly adsorb H₂O and D₂O at room temperature (RT). Solid-state NMR measurements and DFT calculations verified the incorporation of H₂O and D₂O in the organic linker cavities and shed light on their molecular configuration. In addition to porosity, the material exhibits broad light emission centered at 617 nm with a full width at half-maximum (FWHM) of 284 nm (0.96 eV). The recorded water stability is unparalleled for hybrid metal halide and perovskite materials, while the generation of porosity opens new pathways towards unexplored applications (e.g. solid-state batteries) for this class of hybrid semiconductors.     

Interface formation of Al2O3 on n‐GaN(0001): Photoelectron spectroscopy studies

Al₂O₃ insulator layers were deposited step by step by the physical vapor deposition (PVD) method onto gallium nitride in the wurtzite form, n‐type and (0001)‐oriented. The substrate surface and the early stages of Al₂O₃/n‐GaN(0001) interface formation were characterized in situ under ultra‐high vacuum conditions by X‐ray and ultraviolet photoelectron spectroscopy (XPS, UPS). The electron affinity (EA) of the substrate cleaned by annealing was 3.6 eV. Binding energies of the Al 2p (76.0 eV) and the O 1s (532.9 eV) confirmed the creation of the Al₂O₃ compound in the deposited film for which the EA was 1.6 eV. The Al₂O₃ film was found to be amorphous with a bandgap of 6.9 eV determined from the O 1s loss feature. As a result, the calculated Al₂O₃/n‐GaN(0001) valence band offset (VBO) is ?1.3 eV and the corresponding conduction band offset (CBO) 2.2 eV.     

Enhanced Static Modulated Fourier Transform Spectrometer for Fast Approximation in Field Application

We discuss the data sampling frequency, the spectral resolution, and the limit for non-aliasing in the static modulated Fourier transform spectrometer based on a modified Sagnac interferometer. The measurement was performed in a very short 4 ms, which is applicable for real time field operation. The improved spectrometer characteristics were used to investigate the spectral properties of an InGaAs light emitting diode. In addition, The measured spectral peak was shifted from 6420 cm⁻¹ to 6365 cm⁻¹, as the temperature increased from 25 °C to 40 °C, when the operating current is fixed to be 0.55 A. As the applied current increased from 0.30 A to 0.55 A at room temperature, the spectral width was broadened from 316 cm⁻¹ to 384 cm⁻¹. Compared to the conventional Fourier transform spectrometer, the measured spectral width by the static modulated Fourier transform spectrometer showed a deviation less than 10%, and the spectral peak shift according to the temperature rise showed a difference within 2%.     

一种可以反射p波的土层结构

本文将光子晶体的概念应用于土层结构设计，并利用传输矩阵法计算了p波在土层结构中的传播特性。结果表明，这种土层结构可以全部反射特定频率范围内入射的p波，从而可以减少p波对地上建筑的破坏。此外，还考察了土层的物理特性对反射频带的影响。     

Axisymmetric bifurcation analysis in soils by the tangential-subloading surface model

This article discusses localized bifurcation modes corresponding to shear band formation and diffuse bifurcation modes corresponding to bulge formation for cylindrical soil specimen subjected to an axisymmetric load under undrained conditions. We employ the tangential-subloading surface model, which exhibits the characteristic regimes of the governing equations: elliptic, hyperbolic and parabolic. Also, conditions for shear band formation, shear band inclination, diffuse bulging formation, and the long and short wavelength limits of diffuse bulging modes are discussed in relation to material properties and their state of stress, i.e. the stress ratio and the normal-yield ratio. Tangential-plastic strain rate term is required for the analyses of shear band and diffuse bulging. The shear band and the diffuse bulging are generated in not only normal-yield but also subyield states and they are severely affected by the normal-yield ratio describing the degree of approach to the normal-yield state.     

Diffuse mode bifurcation of soil causing convection-like shear investigated by group-theoretic image analysis

Diffuse mode bifurcation of soil under plane-strain compression test is shown, by means of an image analysis based on group-theoretic bifurcation theory, to trigger convection-like shear and to precede shear band formation. First digital photos of Toyoura sand specimens are processed by PIV (particle image velocimetry) to gather digitized images of deformation. Next bifurcation from a uniform state is detected by expanding these images into the double Fourier series and finding a predominant harmonic diffuse bifurcation mode based on that theory. This harmonic bifurcation mode, which is the mixture of a few harmonic functions, expresses complex convection-like shear. Last bifurcation from a non-uniform state is detected by decomposing each image into a few images with different symmetries to extract non-harmonic diffuse bifurcation modes. Diffuse modes of bifurcation, which hitherto were hidden behind predominant uniform compressive deformation, have thus been made transparent by virtue of the group-theoretic image analysis proposed. A possible course of deformation suggested herein is the evolution of diffuse mode bifurcation with a convection-like bifurcation mode breaking uniformity and symmetry, followed by the formation of shear bands through localization.     

Shear Band Formation in Fe–Cr–Mo–V–B–Si Amorphous Alloy under Nanoindentation

The formation of shear bands in Fe–Cr–Mo–V–B–Si amorphous alloy under nanoindentation Is studied. The indentation process is considered against the background of shear band formation in the amorphous material.     

Non‐centrosymmetric plasmonic crystals for second‐harmonic generation with controlled anisotropy and enhancement

Rectangular arrays of pyramidal recesses coated by silver film are investigated by means of polarization‐resolved nonlinear microscopy at 900 nm fundamental wavelength, demonstrating strong dependence of the dipole‐allowed SHG upon the lattice parameters. The plasmonic band gap causes nearly complete SHG suppression in arrays of 650 nm periodicity, whereas a sharp resonance at 550 nm periodicity is observed due to excitation of band edge Bloch states at fundamental frequency, accompanied by symmetry‐constrained interactions with similar modes at the second‐harmonic frequency. Additionally, coupling with modes at the bottom side of the silver film may lead to extraordinary optical transmission, opening a channel for SHG from the highly nonlinear GaAs substrate. Changing the lattice geometry enables SHG intensity modulation over three orders of magnitude, while the effective nonlinear anisotropy can be continuously switched between the two lattice directions, reaching values as high as ±0.96.

     

Prototype electrochromic device and dye sensitized solar cell using spray deposited undoped and ‘Li’ doped V2O5 thin film electrodes

Lithium (Li) (0–5 wt%) doped V₂O₅ thin films were spray deposited at 450 °C onto ITO substrates. Structural analysis using X-ray diffraction and Raman spectroscopy revealed orthorhombic phase of the films. In addition to the V₂O₅ phase, presence of VO₂ peaks due to high deposition temperature is also evident from structural and optical characterization. The non-stoichiometric nature of the films due to loss of the terminal O atom was confirmed from Raman spectroscopy. The direct band gap, indirect bandgap, and phonon energies were also calculated from optical studies. Different charge states of vanadium ions present in the film were identified from X-ray photoelectron spectroscopy study. Results from cyclic voltammetry experiments reflected significant differences between the undoped and Li doped V₂O₅ samples. Transport properties by Hall-effect measured at room temperature indicated significant increase in conductivity, carrier concentration and mobility of V₂O₅ thin films on doping with Li. A Dye Sensitized Solar Cell (DSSC) was fabricated using mobility enhanced 5 wt% Li doped V₂O₅ film as photoanode and its efficiency was found to be 2.7%. A simple electrochromic cell is fabricated using undoped V₂O₅ thin film to demonstrate the colour change.